High-Performance Edge-Emitting Laser (EEL) Chips
UOC's edge-emitting laser diode (EEL) bare chips feature an advanced strained quantum well structure, delivering high electro-optical conversion efficiency, low operating current, and exceptional long-term reliability. Optimized top and bottom metallization ensures robust electrical contact, seamless die bonding, and dependable wire bonding. Furthermore, precision-engineered anti-reflection (AR) and high-reflection (HR) facet coatings protect laser facets, optimize cavity performance, and maximize output power, efficiency, and device lifetime.
| Wavelength band (nm) | Model No. | Po (mW) | Ith (mA) | Iop (mA) | SE (W/A) | θ// (°) | θ⊥ (°) | Chip size (um) |
|---|---|---|---|---|---|---|---|---|
| 635 | U-CP-63051B3 | 5 | 24 | 33 | 0.55 | 7.50 | 33 | 200X300X100 |
| 650 | U-CP-6505001 | 5 | 11 | 17 | 0.80 | 8.00 | 36 | 200X250X100 |
| 650 | U-CP-6505021 | 5 | 11 | 17 | 0.80 | 8.00 | 36 | 250X300X100 |
| 650 | U-CP-65300A1 | 30 | 35 | 65 | 1.00 | 8.00 | 28 | 250X500X100 |
| 660 | U-CP-66A00G6 | 100 | 50 | 140 | 1.05 | 12.00 | 23 | 200X1000X100 |
| 808 | U-CP-8020021 | 20 | 8 | 25 | 1.10 | 7.00 | 27 | 250X300X100 |
| 808 | U-CP-80B00E5 | 200 | 52 | 225 | 1.15 | 10.00 | 28 | 200X500X100 |
| 808 | U-CP-80E0065 | 500 | 75 | 510 | 1.15 | 11.00 | 28 | 300X500X100 |
| 830 | U-CP-83A00A5 | 100 | 17 | 120 | 1.00 | 10.00 | 18 | 250X500X100 |
| 980 | U-CP-9850081 | 50 | 12 | 70 | 0.80 | 9.00 | 35 | 250X400X100 |
| 980 | U-CP-98A0081 | 100 | 35 | 135 | 1.00 | 8.00 | 32 | 250X400X100 |
| 1310 | U-CP-1305013p | 5 | 7 | 0.40 | 22.00 | 34 | 250X250X110 |
| Model No. | Junction Capacitance(pF) | Peak Sensing Wavelength(nm) | Spectrum Sensitivity(nm) | Forward Voltage(V) | VPD size(um) |
|---|---|---|---|---|---|
| U-PD-VS129 | 4 | 650 | 450~1050 | 1.30 | 420 x550 |
