雷射晶圓,雷射晶片,激光芯片,激光雷射,製造加工, Epi Wafer, Edge Emitting Laser, Laser Chips, LD Chips, Diode Laser, Laser Diode,635nm, 635nm LD Chips, 650nm, 650nm LD chips, 670nm, 808nm, 830nm, 850nm,980nm,1310nm, 1310nm laser chips, 1550nm, 1550nm LD chips, LD chip process, Laser OEM, Epi growth, Wafer Process, RCLED,LED chip process,

epi-wafer chips

epi-wafer chipsEpi-wafer chips

Product - Epi Wafer
Item
Descriptions
Materials
Substrate
eif-wafer chips Red Laser
635nm ~ 690nm Edge emitting laser InGaAlP 2 inch GaAs substrate
Infrared Laser 780nm ~ 980nm Edge emitting laser AlGaAs/Al-free active layer
2 inch GaAs substrate
Telecom. Laser 1300nm ~ 1550nm Edge emitting laser InGaAlAs/InGaAsP 2 inch InP substrate
Customer Design OEM/ODM
OEM/ODM 2 inch GaAs/InP substrate

Epi Wafers - RCLED Epi-Wafer
Product - Epi Wafer
Item
Descriptions
Materials
Substrate
eif-wafer chips High Speed LED 650/660nm Resonant Cavity LED without Oxidation Layer DBR AlxGa1-xAs / AlxGa1-xAs
High Index/ Low Index
QW InGaP / AlGaInP
2" SC GaAs Sub.
High Speed LED 650/660nm Resonant Cavity LED with Oxidation Layer DBR AlxGa1-xAs / AlxGa1-xAs
High Index/ Low Index
QW InGaP / AlGaInP
Oxidation Layer Al0.98Ga0.02As
2" SC GaAs Sub.


Laser Diodes chipslaser diode chips
laser diode chips

Model No.

λp
[nm]
Po
[mW]
Ith
[mA]
Iop
[mA]
Vop
[V]
SE
[W/A]

Contrast to old
model No.

U-CP-6305123 636 5 24 32 2.2 0.55 7.5 33 SLD-635-P5-C-N-RG-250-01
U-CP-6505001 650 5 11 17 2.2 0.8 8 36  
U-CP-6505021 650 5 11 17 2.2 0.8 8 36 SLD-650-P5-C-300-04
U-CP-6505142 655 5 23 31 2.2 0.63 8 28 SLD-650-P5-C-DVD-06
U-CP-66A0095p 660 100 60 170 2.3 0.9 11 30  
U-CP-80B0066 805 200 40 210 1.9 1.15 6.5 28  
U-CP-9850044 980 50 12 75 1.5 0.8 13 30 SLD-980-P50-C-300-05
U-CP-98C0075p 980 300 105 530 1.6 0.7 7 31  
U-CP-98E00C5p 980 500 270 870 1.8 0.83 11 35  
U-CP-1305013p 1310 5 7   1.25 0.40 22 34  

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U.O.C is main Epi-Wafer chips manufacture in Taiwan.

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