epi-wafer chips

epi-wafer chipsEpi-wafer chips

Product - Epi Wafer
Item
Descriptions
Materials
Substrate
eif-wafer chips Red Laser
635nm ~ 690nm Edge emitting laser InGaAlP 2 inch GaAs substrate
Infrared Laser 780nm ~ 980nm Edge emitting laser AlGaAs/Al-free active layer
2 inch GaAs substrate
Telecom. Laser 1300nm ~ 1550nm Edge emitting laser InGaAlAs/InGaAsP 2 inch InP substrate
Customer Design OEM/ODM
OEM/ODM 2 inch GaAs/InP substrate

Epi Wafers - RCLED Epi-Wafer
Product - Epi Wafer
Item
Descriptions
Materials
Substrate
eif-wafer chips High Speed LED 650/660nm Resonant Cavity LED without Oxidation Layer DBR AlxGa1-xAs / AlxGa1-xAs
High Index/ Low Index
QW InGaP / AlGaInP
2" SC GaAs Sub.
High Speed LED 650/660nm Resonant Cavity LED with Oxidation Layer DBR AlxGa1-xAs / AlxGa1-xAs
High Index/ Low Index
QW InGaP / AlGaInP
Oxidation Layer Al0.98Ga0.02As
2" SC GaAs Sub.


Laser Diodes chipslaser diode chips
laser diode chips

Model No.

λp
[nm]
Po
[mW]
Ith
[mA]
Iop
[mA]
Vop
[V]
SE
[W/A]

Contrast to old
model No.

U-CP-6305123 636 5 24 32 2.2 0.55 7.5 33 SLD-635-P5-C-N-RG-250-01
U-CP-6505001 650 5 11 17 2.2 0.8 8 36  
U-CP-6505021 650 5 11 17 2.2 0.8 8 36 SLD-650-P5-C-300-04
U-CP-6505142 655 5 23 31 2.2 0.63 8 28 SLD-650-P5-C-DVD-06
U-CP-66A0095p 660 100 60 170 2.3 0.9 11 30  
U-CP-9850044 980 50 12 75 1.5 0.8 13 30 SLD-980-P50-C-300-05
U-CP-98C0075p 980 300 105 530 1.6 0.7 7 31  
U-CP-1305013p 1310 5 7   1.25 0.40 22 34  

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U.O.C is main Epi-Wafer chips manufacture in Taiwan.

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