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Epi-walfer chips

Product - Epi Wafer	Item	Descriptions	Materials	Substrate
	Red Laser	635nm ~ 690nm Edge emitting laser	InGaAlP	2 inch GaAs substrate
	Infrared Laser	780nm ~ 980nm Edge emitting laser	AlGaAs/Al-free active layer	2 inch GaAs substrate
	Telecom. Laser	1300nm ~ 1550nm Edge emitting laser	InGaAlAs/InGaAsP	2 inch InP substrate
	Customer Design	OEM/ODM	OEM/ODM	2 inch GaAs/InP substrate

Epi Wafers - RCLED Epi-Wafer

Product - Epi Wafer	Item	Descriptions	Materials	Substrate
	High Speed LED	650/660nm Resonant Cavity LED without Oxidation Layer	DBR AlxGa1-xAs / AlxGa1-xAs High Index/ Low Index QW InGaP / AlGaInP	2" SC GaAs Sub.
	High Speed LED	650/660nm Resonant Cavity LED with Oxidation Layer	DBR AlxGa1-xAs / AlxGa1-xAs High Index/ Low Index QW InGaP / AlGaInP Oxidation Layer Al0.98Ga0.02As	2" SC GaAs Sub.

Laser Diodes chips

laser diode chips

Model No.	λp [nm]	Po [mW]	Ith [mA]	Iop [mA]	Vop [V]	SE [W/A]			Contrast to old model No.
U-CP-6305123	638	5	28	37	2.3	0.5	7.5	33	SLD-635-P5-C-N-RG-250-01
U-CP-6505010	655	5	14	22	2.3	0.5	9	36	SLD-650-P5-UC-250-04
U-CP-6505011	655	5	13	17	2.3	0.8	9	36	SLD-650-P5-C-250-03
U-CP-6505001	655	5	13	17	2.3	0.8	9	36
U-CP-6505021	655	5	13	18	2.2	0.8	9	36	SLD-650-P5-C-300-04
U-CP-6505131	655	5	25	30	2.3	0.65	8	33	SLD-650-P5-C-RG-300-250-07
U-CP-6505142	655	5	25	35	2.3	0.65	8	28	SLD-650-P5-C-DVD-06
U-CP-6520163-preliminary	660	20	45	75	2.25	0.65	8	30
U-CP-80B0065	804	200	70	260	1.9	1	12	40	SLD-808-P200-C-06
U-CP-80C0055-preliminary	802	300	100	370	1.9	1	10	40
U-CP-80E0075-preliminary	805	500	100	570	1.9	1	10	40
U-CP-9850044	980	50	12	75	1.5	0.8	13	30	SLD-980-P50-C-300-05
U-CP-130504	1310	5	10		1.3	0.41	18	35
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U.O.C is main Epi-Wafer chips manufacture in Taiwan.

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